|
|
|
单晶硅方棒技术规格
|
|
|
|
编号
NO.
|
项目
|
规格
|
单位UNITS
|
|
ITEMS
|
SPECIFICATIONS
|
|
1
|
拉制方式
|
CZ
|
|
|
Growing Method
|
|
2
|
材 料
|
单晶硅
|
|
|
Material
|
Monocrystalline Silicon
|
|
3
|
导电类型&掺杂剂
|
P/Boron or N/Phosphorus
|
|
|
Type & Dopant
|
|
4
|
硅片尺寸
|
125*125
|
156*156
|
mm
|
|
Wafer Size
|
（见硅片页面）
|
(See wafer page1)
|
|
5
|
直径
|
150, 160, 165
|
200
|
mm
|
|
Diameter
|
|
6
|
垂直度
|
90±0.3
|
deg
|
|
Perpendicularity
|
|
7
|
长度
|
100 --- 500
|
mm
|
|
Length
|
|
8
|
电阻率
|
P-type : 1 - 3
N-type : specified by customer
|
Ω·cm
|
|
Resistivity
|
|
9
|
少子寿命
|
P-type : ≥ 10
N-type : ≥ 1000
|
μs
|
|
Minority Carrier Life
|
|
10
|
晶向
|
＜100＞ ±2.0
|
deg
|
|
Orientation
|
|
11
|
位错密度
|
≤ 3000
|
pcs/cm2
|
|
Dislocation Density
|
|
12
|
氧含量
|
≤ 1*1018 (ASTM F121-83)
|
atoms/cm3
|
|
Oxygen Content
|
|
13
|
碳含量
|
≤ 5*1016 (ASTM F123-83)
|
atoms/cm3
|
|
Carbon Content
|
|
|
|