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1999.12
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Shanghai Comtec Semiconductor Co., Ltd. established. (SCSC)
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2003.01
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ComtecSemiconductorwascertifiedbyInternationalStandardsofsiliconmaterialprocess.
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2004.10
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ComtecSemiconductorwasawarded“CertificateforEnterpriseswithHighandNewTechnology”.
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2005.06
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Comtec Semiconductor rded“CertificateforForeign-fundedEnterpriseswithAdvancedTechnology.
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2005.07
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ShanghaiComtecSolarTechnologyCo.,Ltd.established.(SCST)
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2005.08
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ComtecSolarwasawardedthecertificateofhigh-techproductapplication.
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2005.12
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ComtecSolarwasawarded“Quality Management System Certificate for the production of silicon wafers for solar cell”.
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2007.05
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Comtec Semiconductor was awarded “Certificate of Utility Model Patent” for mechanical parts used in silicon process.
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2007.06
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Comtec Semiconductor was awarded “Certificate of Utility Model Patent” for a special fixture for silicon ingot processing.
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2007.06
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Comtec Solar was awarded “Certificate of Utility Model Patent” for a cropping machine for used spool wires.
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2007.07
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Comtec Solar Expansion Phase I is completed. New facilities and equipments have been put into operation. Our production capacity increased significantly.
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2008.01
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Comtec Solar Commenced Production of 170μm Solar wafers”.
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2008.12
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Comtec Solar was awarded “Certificate for Enterprises with High and New Technology”.
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2010.10
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Comtec Solar Started development of N-type Wafers,for large scale commerical production.
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2011.05
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Comtec Solar commenced massire production of 125μm by 125μm N-type wafers. "
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2012
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Comtec Solar achieved record high 24% conversion efficiency rate and reduced wafer thickness to average 150μm”.
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2013
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Comtec Solar reduced wafer thickness to below 150μm and improve average conversion efficiercy to 24% Comtec solar completed diawond wire qualifiation procedures with a major Japanese customers and begar shipment.”.
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2014
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Comtec Solar commenced pilot operation of fle rew facilities in Malays of 300MW”.
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