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单晶硅方棒技术规格 |
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编号
NO.
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项目
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规格
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单位UNITS
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ITEMS
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SPECIFICATIONS
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1
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拉制方式
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CZ
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Growing Method
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2
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材 料
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单晶硅
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Material
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Monocrystalline Silicon
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3
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导电类型&掺杂剂
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P/B or P/Ga
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Type & Dopant
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4
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硅片尺寸
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125*125±0.5
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156*156±0.5
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mm
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Wafer Size
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（见附图1）
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(See Figure 1)
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5
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直径
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150±0.5
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200±0.5
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mm
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Diameter
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6
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垂直度
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90±0.3
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°
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Perpendicularity
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7
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长度
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100<L<500
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mm
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Length
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8
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电阻率
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A: 0.5 ≤ ρ < 3 B: 3 ≤ ρ < 6
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Ω·cm
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Resistivity
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9
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少子寿命
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≥ 10
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μs
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Minority Carrier Life
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10
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晶向
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＜100＞ ±2.0
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°
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Orientation
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11
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位错密度
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≤ 3000
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pcs/cm2
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Dislocation Density
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12
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氧含量
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≤ 1*1018 (ASTM F121-83)
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atoms/cm3
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Oxygen Content
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13
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碳含量
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≤ 5*1016 (ASTM F123-83)
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atoms/cm3
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Carbon Content
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硅片型号
Wafer Type
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尺寸(mm)
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Dimension
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A
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B
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C
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D
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Max
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Min
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Max
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Min
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Max
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Min
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Max
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Min
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125 I
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125.5
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124.5
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150.5
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149.5
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84
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82
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31
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29
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125 II
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125.5
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124.5
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165.5
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164.5
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109
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107
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13
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11
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156 I
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156.5
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155.5
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200.5
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199.5
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126
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124
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23
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21
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156 II
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156.5
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155.5
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203.5
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202.5
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131
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129
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19
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17
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附图1
Figure 1, Cross Section |
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